1 Composite Transistors PT — Ta 500 120 Ta=25˚C XN1872 ID — VDS 120 VDS=5V 100 VGS=6.0V 80 5.5V 5.0V 4.5V 40 ID — VGS Total power dissipation PT (mW) 400 100 Drai.

Silicon N-channel . Enhancement MOS FET

XN1871

XN1042

XN1043

XN1049

XN1059

XN1110

XN1111

XN1112

XN1113

XN1114

XN1115

XN1116

XN1117

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